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师资介绍

吴正云

发布时间:2023-01-18 13:36      浏览次数:


吴正云

教授、博士生导师

邮箱:zhywu@xmu.edu.cn

办公电话:18959280522


研究领域


微电子与固体电子学,半导体材料及光电子器件


教育和工作经历


1. 1992/09 – 1996/7,厦门大学,物理系,博士

2. 1986/09 – 1989/7,厦门大学,物理系,硕士

3. 1978/09 – 1982/7,厦门大学,物理系,学士


代表性文章或专著


1) Local Avalanche Effect of 4H-SiC p-i-n Ultraviolet Photodiodes With Periodic Micro-Hole Arrays, IEEE Electron Device Letters, Vol.43(1): pp.64-67, 2022;

2) The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC, WIPDA ASIA, pp.281-284, 2021;

3) MgxZn1-xO prepared by the Sol-Gel method and its application for ultraviolet photodetectors, Journal of electronic materials, Vol.49(8), pp. 4518-4523, 2020;

4) Characteristics of graphene/4H-SiC/graphene photodetector based on hydrogenated multilayer-graphene electrode, Journal of Nanophotonics, Vol.13(1), pp. 016013, 2019;

5) Effect of epitaxial layer's thickness on spectral response of 4H-SiC p-i-n ultraviolet photodiodes, Electronics Letters, Vol. 55(4), pp.216-218, 2019;

6) Ultraviolet Optical Properties and Structural Characteristics of Radio Frequency-Deposited HfO2 Thin Films, Chinese Journal of Chemical Physics, Vol. 31(6), pp.813-817, 2018;

7) Raman spectroscopy of multi-layer graphene epitaxially grown on 4H-SiC by Joule Heat Decomposition, Nanoscale Research Letters, Vol. 13, pp. 197, 2018;

8) 背照式结构的4H-SiC紫外光电探测器阵列及制备,2022.04,中国,发明专利,ZL202011005272.2;

9) 一种碳化硅同轴紫外光电探测器及其制备方法, 2021.09, 中国, 发明专利,ZL202010400369.7;

10) 一种MSM结构4H-SiC紫外光电探测器的制备方法, 2020.05, 中国, 发明专利,ZL201711482215.1;

11) 具有球冠结构的4H-SiC紫外光电探测器及制备方法,2020.03,中国,发明专利,ZL201810402996.7;

12) 一种高压电气设备局部放电的监控装置,2022.12,中国,实用新型专利,ZL202221842362.1。