吴正云
教授、博士生导师
邮箱：zhywu@xmu.edu.cn
办公电话：18959280522
研究领域
微电子与固体电子学，半导体材料及光电子器件
教育和工作经历
1. 1992/09 – 1996/7，厦门大学，物理系，博士
2. 1986/09 – 1989/7，厦门大学，物理系，硕士
3. 1978/09 – 1982/7，厦门大学，物理系，学士
代表性文章或专著
1) Local Avalanche Effect of 4H-SiC p-i-n Ultraviolet Photodiodes With Periodic Micro-Hole Arrays, IEEE Electron Device Letters, Vol.43(1): pp.64-67, 2022；
2) The influence of hydrogen annealing on minority carrier lifetimes in 4H-SiC, WIPDA ASIA, pp.281-284, 2021;
3) MgxZn1-xO prepared by the Sol-Gel method and its application for ultraviolet photodetectors, Journal of electronic materials, Vol.49(8), pp. 4518-4523, 2020;
4) Characteristics of graphene/4H-SiC/graphene photodetector based on hydrogenated multilayer-graphene electrode, Journal of Nanophotonics, Vol.13(1), pp. 016013, 2019;
5) Effect of epitaxial layer's thickness on spectral response of 4H-SiC p-i-n ultraviolet photodiodes, Electronics Letters, Vol. 55(4), pp.216-218, 2019;
6) Ultraviolet Optical Properties and Structural Characteristics of Radio Frequency-Deposited HfO2 Thin Films, Chinese Journal of Chemical Physics, Vol. 31(6), pp.813-817, 2018;
7) Raman spectroscopy of multi-layer graphene epitaxially grown on 4H-SiC by Joule Heat Decomposition, Nanoscale Research Letters, Vol. 13, pp. 197, 2018；
8) 背照式结构的4H-SiC紫外光电探测器阵列及制备，2022.04，中国，发明专利，ZL202011005272.2；
9) 一种碳化硅同轴紫外光电探测器及其制备方法, 2021.09, 中国, 发明专利，ZL202010400369.7；
10) 一种MSM结构4H-SiC紫外光电探测器的制备方法, 2020.05, 中国, 发明专利，ZL201711482215.1；
11) 具有球冠结构的4H-SiC紫外光电探测器及制备方法，2020.03，中国，发明专利，ZL201810402996.7；
12) 一种高压电气设备局部放电的监控装置，2022.12，中国，实用新型专利，ZL202221842362.1。
